Power Module

©2016 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:10/05/16

208

MG1225H-XBN2MM

1200V 25A IGBT Module

Features

RoHS

Applications

• High level of

integration—only one

power semiconductor

module required for the

whole drive

• Low saturation voltage

and positive temperature

coefficient

• Fast switching and short

tail current

• Free wheeling diodes

with fast and soft reverse

recovery

• Industry standard package

with insulated copper

base plateand soldering

pins for PCB mounting

• Temperature sense

included

• AC motor control

• Motion/servo control

• Inverter and power

supplies

Symbol

Parameters

Test Conditions

Values

Unit

IGBT

V

CES

Collector - Emitter Voltage

T

1200

V

V

GES

Gate - Emitter Voltage

±20

V

I

C

DC Collector Current

T

40

A

T

25

A

I

CM

Repetitive Peak Collector Current

t

50

A

P

tot

Power Dissipation Per IGBT

147

W

Diode

V

RRM

Repetitive Reverse Voltage

T

1200

V

I

F(AV)

Average Forward Current

T

35

A

T

25

A

I

FRM

Repetitive Peak Forward Current

t

50

A

T

200

Symbol

Parameters

Test Conditions

Min

Typ

Max

Unit

T

J max

Max. Junction Temperature

150

°C

T

J op

Operating Temperature

-40

125

°C

T

stg

Storage Temperature

-40

125

°C

V

isol

Insulation Test Voltage

AC, t=1min

3000

V

CTI

Comparative Tracking Index

250

M

d

Mounting Torque

Recommended (M5)

2.5

5

N·m

Weight

180

g

MG1225H-XBN2MM

1

Inverter Sector