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CMT02N60N251 Datasheet(PDF) 2 Page - List of Unclassifed Manufacturers |
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CMT02N60N251 Datasheet(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 7 page CMT02N60 POWER FIELD EFFECT TRANSISTOR 2004/12/01 Rev. 1.2 Champion Microelectronic Corporation Page 2 ORDERING INFORMATION Part Number Package CMT02N60N251 TO-251 CMT02N60N252 TO-252 CMT02N60N220 TO-220 CMT02N60N220FP TO-220 Full Package CMT02N60GN251* TO-251 CMT02N60GN252* TO-252 CMT02N60GN220* TO-220 CMT02N60GN220FP* TO-220 Full Package *Note: G : Suffix for Pb Free Product ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT02N60 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 μA) V(BR)DSS 600 V Drain-Source Leakage Current (VDS = 600 V, VGS = 0 V) (VDS = 480 V, VGS = 0 V, TJ = 125℃) IDSS 0.25 1.0 mA Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR 100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 μA) VGS(th) 2.0 3.1 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.0A) * RDS(on) 3.3 4.4 Ω Drain-Source On-Voltage (VGS = 10 V) (ID = 2.0 A) VDS(on) 8.8 V Forward Transconductance (VDS ≧ 50 V, ID = 1.0A) * gFS 1.0 mhos Input Capacitance Ciss 435 pF Output Capacitance Coss 56 pF Reverse Transfer Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Crss 9.2 pF Turn-On Delay Time td(on) 12 ns Rise Time tr 21 ns Turn-Off Delay Time td(off) 30 ns Fall Time (VDD = 300 V, ID = 2.0 A, VGS = 10 V, RG = 18Ω) * tf 24 ns Total Gate Charge Qg 13 22 nC Gate-Source Charge Qgs 2.0 nC Gate-Drain Charge (VDS = 400 V, ID = 2.0 A, VGS = 10 V)* Qgd 6.0 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.0 1.6 V Forward Turn-On Time ton ** ns Reverse Recovery Time (IS = 2.0 A, VGS = 0 V, dIS/dt = 100A/µs) trr 340 ns * Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance |
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