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MG1240H-XBN2MM Datasheet(PDF) 2 Page - Littelfuse |
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MG1240H-XBN2MM Datasheet(HTML) 2 Page - Littelfuse |
2 / 8 page Power Module ©2016 Littelfuse, Inc Specifications are subject to change without notice. Revised:10/05/16 218 MG1240H-XBN2MM 1200V 40A IGBT Module Symbol Parameters Test Conditions Min Typ Max Unit IGBT V GE(th) Gate - Emitter Threshold Voltage V CE=VGE, IC=1.5mA 5.0 5.8 6.5 V V CE(sat) Collector - Emitter I C=40A, VGE=15V, TJ=25°C 1.8 V Saturation Voltage I C=40A, VGE=15V, TJ=125°C 2.05 V I ICES Collector Leakage Current V CE=1200V, VGE=0V, TJ=25°C 0.25 mA V CE=1200V, VGE=0V, TJ=125°C 2 mA I GES Gate Leakage Current V CE=0V, VGE=±15V, TJ=125°C -400 400 nA R Gint Integrated Gate Resistor 6.0 Ω Q ge Gate Charge V CE=600V, IC=40A , VGE=±15V 0.33 μC C ies Input Capacitance V CE=25V, VGE=0V, f =1MHz 2.5 nF C res Reverse Transfer Capacitance 0.11 nF t d(on) Turn - on Delay Time V CC=600V I C=40A R G =27Ω V GE=±15V Inductive Load T J=25°C 90 ns T J=125°C 90 ns t r Rise Time T J=25°C 30 ns T J=125°C 50 ns t d(off) Turn - off Delay Time T J=25°C 420 ns T J=125°C 520 ns t f Fall Time T J=25°C 70 ns T J=125°C 90 ns E on Turn - on Energy T J=25°C 4.1 mJ T J=125°C 5.8 mJ E off Turn - off Energy T J=25°C 3.6 mJ T J=125°C 4.2 mJ I SC Short Circuit Current t psc≤10μS , VGE=15V; TJ=125°C , VCC=900V 160 A R thJC Junction-to-Case Thermal Resistance (Per IGBT) 0.64 K/W Diode V F Forward Voltage I F=40A, VGE=0V, TJ =25°C 1.80 V I F=40A, VGE=0V, TJ =125°C 1.85 V t RR Reverse Recovery Time I F=40A, VR=600V di F/dt=-400A/µs T J=125°C 240 ns I RRM Max. Reverse Recovery Current 35 A E rec Reverse Recovery Energy 2.8 mJ R thJCD Junction-to-Case Thermal Resistance (Per Diode) 1.0 K/W Electrical and Thermal Specifications (T J = 25°C, unless otherwise specified) 2 |
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