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2SK3525-01MR Datasheet(PDF) 2 Page - Fuji Electric |
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2SK3525-01MR Datasheet(HTML) 2 Page - Fuji Electric |
2 / 4 page 2 Characteristics 2SK3525-01MR FUJI POWER MOSFET ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID=f(VDS):80µs Pulse test,Tch=25°C gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C 02468 10 12 14 16 18 20 22 24 26 28 30 0 2 4 6 8 10 12 14 16 18 20V 10V 8V 7.5V 7.0V VDS [V] Typical Output Characteristics VGS=6.5V 01234 5 6789 10 0.1 1 10 VGS[V] Typical Transfer Characteristic 0.1 1 10 0.1 1 10 100 ID [A] Typical Transconductance 0 2 4 6 8 1012 14 1618 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ID [A] Typical Drain-Source on-state Resistance 10V 20V 8V 7.5V 7.0V VGS=6.5V -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tch [ °C] typ. max. Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3A,VGS=10V 0 25 50 75 100 125 150 0 10 20 30 40 50 Allowable Power Dissipation PD=f(Tc) Tc [ °C] |
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