Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

UPD48288209AF1 Datasheet(PDF) 10 Page - Renesas Technology Corp

Part # UPD48288209AF1
Description  288M-BIT Low Latency DRAM
Download  54 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD48288209AF1 Datasheet(HTML) 10 Page - Renesas Technology Corp

Back Button UPD48288209AF1 Datasheet HTML 6Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 7Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 8Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 9Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 10Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 11Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 12Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 13Page - Renesas Technology Corp UPD48288209AF1 Datasheet HTML 14Page - Renesas Technology Corp Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 54 page
background image
µµµµPD48288209AF1, µµµµPD48288218AF1, µµµµPD48288236AF1
R10DS0254EJ0101 Rev. 1.01
Page 10 of 53
Jan. 15, 2016
1.
Electrical Characteristics
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Rating
Unit
Supply voltage
VEXT
–0.3 to +2.8
V
Supply voltage
VDD
–0.3 to +2.1
V
Output supply voltage,
VDDQ
–0.3 to +2.1
V
Input voltage, Input / Output voltage
Input / Output voltage
VIH / VIL
–0.3 to +2.1
V
Junction temperature
Tj MAX.
110
°C
Storage temperature
Tstg
–55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent
damage. The device is not meant to be operated under conditions outside the limits described in the
operational section of this specification. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Recommended DC Operating Conditions
0°C
≤ TC ≤ 95°C; 1.7 V ≤ VDD ≤ 1.9 V, unless otherwise noted.
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Note
Supply voltage
VEXT
2.38
2.5
2.63
V
1
Supply voltage
VDD
1.7
1.8
1.9
V
1
Output supply voltage
VDDQ
1.4
VDD
V
1, 2, 3
Reference Voltage
VREF
0.49 x VDDQ
0.5 x VDDQ
0.51 x VDDQ
V
1, 4, 5
Termination voltage
VTT
0.95 x VREF
VREF
1.05 x VREF
V
1, 6
Input HIGH voltage
VIH (DC)
VREF + 0.1
V
1
Input LOW voltage
VIL (DC)
VREF – 0.1
V
1
Notes 1. All voltage referenced to VSS (GND).
2. During normal operation, VDDQ must not exceed VDD.
3. VDDQ can be set to a nominal 1.5 V
± 0.1 V or 1.8 V ± 0.1 V supply.
4. Typically the value of VREF is expect to be 0.5 x VDDQ of the transmitting device. VREF is expected to track
variations in VDDQ.
5. Peak-to-peak AC noise on VREF must not exceed
± 2% VREF(DC).
6. VTT is expected to be set equal to VREF and must track variations in the DC level of VREF.


Similar Part No. - UPD48288209AF1

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
UPD48288209AFF-E18-DW1 RENESAS-UPD48288209AFF-E18-DW1 Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
UPD48288209AFF-E18-DW1-A RENESAS-UPD48288209AFF-E18-DW1-A Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
UPD48288209AFF-E24-DW1 RENESAS-UPD48288209AFF-E24-DW1 Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
UPD48288209AFF-E24-DW1-A RENESAS-UPD48288209AFF-E24-DW1-A Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
UPD48288209AFF-E25-DW1 RENESAS-UPD48288209AFF-E25-DW1 Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
More results

Similar Description - UPD48288209AF1

ManufacturerPart #DatasheetDescription
logo
Renesas Technology Corp
UPD48288118AF1 RENESAS-UPD48288118AF1 Datasheet
1Mb / 52P
   288M-BIT Low Latency DRAM
UPD48288209-A RENESAS-UPD48288209-A Datasheet
862Kb / 50P
   288M-BIT Low Latency DRAM Common I/O
Feb 01, 2013
UPD48288118-A RENESAS-UPD48288118-A Datasheet
843Kb / 48P
   288M-BIT Low Latency DRAM Separate I/O
Feb 01, 2013
UPD48576118F1 RENESAS-UPD48576118F1 Datasheet
1Mb / 52P
   576M-BIT Low Latency DRAM
UPD48576209F1 RENESAS-UPD48576209F1 Datasheet
1Mb / 54P
   576M-BIT Low Latency DRAM
UPD48288209A RENESAS-UPD48288209A Datasheet
1Mb / 53P
   288M-BIT Low Laten cy DRAM Common I/O
Oct 01, 2012
UPD48288109A RENESAS-UPD48288109A Datasheet
1Mb / 52P
   288M-BIT Low Laten cy DRAM Separate I/O
Oct 01, 2012
UPD48576209 RENESAS-UPD48576209 Datasheet
1Mb / 53P
   576M-BIT Low Latency DRAM Common I/O
Oct 01, 2012
UPD48576109 RENESAS-UPD48576109 Datasheet
1Mb / 52P
   576M-BIT Low Latency DRAM Separate I/O
Oct 01, 2012
logo
Elpida Memory
EDR2518ABSE ELPIDA-EDR2518ABSE Datasheet
1Mb / 79P
   288M bits Direct Rambus DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com