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TSX562IQ2T Datasheet(PDF) 9 Page - STMicroelectronics |
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TSX562IQ2T Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 28 page TSX56x, TSX56xA Electrical characteristics DocID023274 Rev 5 9/28 Symbol Parameter Conditions Min. Typ. Max. Unit SR Slew rate RL = 10 kΩ, CL = 100 pF, Vout = 0.5 V to VCC - 0.5 V 1.1 V/μs en Equivalent input noise voltage density f = 1 kHz 55 nV/√Hz f = 10 kHz 29 ∫en Low-frequency peak-to- peak input noise Bandwidth, f = 0.1 to 10 Hz 15 µVpp THD+N Total harmonic distortion + noise Follower configuration, fin = 1 kHz, RL = 100 kΩ, Vicm = (VCC -1.5 V)/2, BW = 22 kHz, Vout = 2 Vpp 0.002 % Notes: (1)See Section 5.3: "Input offset voltage drift over temperature" (2)Typical value is based on the Vio drift observed after 1000h at 125 °C extrapolated to 25 °C using the Arrhenius law and assuming an activation energy of 0.7 eV. The operational amplifier is aged in follower mode configuration. (3)Guaranteed by design |
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