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TC58512FT Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TC58512FT
Description  TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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 2 page
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TC58512FT
2001-03-05
2/43
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VALUE
UNIT
VCC
Power Supply Voltage
-0.6 to 4.6
V
VIN
Input Voltage
-0.6 to 4.6
V
VI/O
Input/Output Voltage
-0.6 V to VCC + 0.3 V (£ 4.6 V)
V
PD
Power Dissipation
0.3
W
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
-55 to 150
°C
Topr
Operating Temperature
0 to 70
°C
CAPACITANCE *(Ta
==== 25°C, f ==== 1 MHz)
SYMB0L
PARAMETER
CONDITION
MIN
MAX
UNIT
CIN
Input
VIN = 0 V
¾
10
pF
COUT
Output
VOUT = 0 V
¾
10
pF
*
This parameter is periodically sampled and is not tested for every device.
I/O Control circuit
Status register
Address register
Command register
Column buffer
Column decoder
Data register
Sense amp
Memory cell array
Control
HV generator
Logic control
BY
/
RY
VCC
I/O1
VSS
I/O8
to
WP
CE
CLE
ALE
WE
RE
BY
/
RY




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