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TA78DL15AS Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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TA78DL15AS Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TA78DL05,06,08,09,10,12,15AS 2003-01-29 2 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Operating input voltage VIN 29 V Input voltage of surge VIN 60 V (Ta = 25°C) 2 Power dissipation (Tc = 25°C) PD 20 W Operating temperature Topr −40~85 °C Storage temperature Tstg −55~150 °C Junction temperature Tj 150 °C Rth (j-c) 6.25 Thermal resistance Rth (j-a) 62.5 °C/W Storage temperature·time Tsol 260 (10s) °C TA78DL05AS Electrical Characteristics (Unless otherwise specified, VIN = 14 V, IOUT = 10 mA, Tj = 25°C) Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit Output voltage VOUT ― 5.35 V ≤ VIN ≤ 26 V, −40°C ≤ Ta ≤ 85°C 4.75 5.0 5.25 V 9 V ≤ VIN ≤ 16 V ― 2 10 Line regulation Reg·line ― 6 V ≤ VIN ≤ 26 V ― 4 30 mV Load regulation Reg·load ― 10 mA ≤ IOUT ≤ 200 mA ― 14 50 mV Quiescent current IB ― IOUT ≤ 10 mA, 6 V ≤ VIN ≤ 26 V ― 0.5 1 mA IOUT = 50 mA ― 0.15 0.3 Dropout voltage VD ― IOUT = 200 mA ― 0.4 0.6 V Max operating voltage VIN ― ― 29 33 ― V |
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