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ALD910022 Datasheet(PDF) 7 Page - Advanced Linear Devices |
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ALD910022 Datasheet(HTML) 7 Page - Advanced Linear Devices |
7 / 17 page ALD8100XX/ALD9100XX SUPERCAPACITOR Advanced Linear Devices, Inc. 7 of 17 AUTO BALANCING (SAB) MOSFET ARRAY FAMILY TABLE 2. ALD 9100XX SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFETS EQUIVALENT ON RESISTANCE AT DIFFERENT INPUT VOLTAGES AND OUTPUT CURRENTS Gate- OUTPUT CURRENT ALD Part Threshold VIN (V) 2 IOUT =IDS(ON) (µA) 1 TA = 25 °C Number Voltage Equivalent ON Vt (V) Resistance (M Ω) 0.0001 0.001 0.01 0.1 1 10 100 300 1000 3000 10000 ALD910028 2.80 VIN (V) 2.40 2.50 2.60 2.70 2.80 2.90 3.02 3.10 3.24 3.30 3.80 RDS(ON) (MΩ) 24000 2500 260 27 2.8 0.29 0.030 0.01 0.003 0.001 0.0004 ALD910027 2.70 VIN (V) 2.30 2.40 2.50 2.60 2.70 2.80 2.92 3.00 3.14 3.20 3.70 RDS(ON) (MΩ) 23000 2400 250 26 2.7 0.28 0.029 0.01 0.003 0.001 0.0004 ALD910026 2.60 VIN (V) 2.20 2.30 2.40 2.50 2.60 2.70 2.82 2.90 3.04 3.10 3.60 RDS(ON) (MΩ) 22000 2300 240 25 2.6 0.27 0.028 0.01 0.003 0.001 0.0004 ALD910025 2.50 VIN (V) 2.10 2.20 2.30 2.40 2.50 2.60 2.72 2.80 2.94 3.00 3.50 RDS(ON) (MΩ) 21000 2200 230 24 2.5 0.26 0.027 0.01 0.003 0.001 0.0004 ALD910024 2.40 VIN (V) 2.00 2.10 2.20 2.30 2.40 2.50 2.62 2.70 2.84 2.90 3.40 RDS(ON) (MΩ) 20000 2100 220 23 2.4 0.25 0.026 0.009 0.003 0.001 0.0003 ALD910023 2.30 VIN (V) 1.90 2.00 2.10 2.20 2.30 2.40 2.52 2.60 2.74 2.80 3.30 RDS(ON) (MΩ) 19000 2000 210 22 2.3 0.24 0.025 0.009 0.003 0.001 0.0003 ALD910022 2.20 VIN (V) 1.80 1.90 2.00 2.10 2.20 2.30 2.42 2.50 2.64 2.70 3.20 RDS(ON) (MΩ) 18000 1900 200 21 2.2 0.23 0.024 0.008 0.003 0.001 0.0003 ALD910021 2.10 VIN (V) 1.70 1.80 1.90 2.00 2.10 2.20 2.32 2.40 2.54 2.60 3.10 RDS(ON) (MΩ) 17000 1800 190 20 2.1 0.22 0.023 0.008 0.003 0.001 0.0003 ALD910020 2.00 VIN (V) 1.60 1.70 1.80 1.90 2.00 2.10 2.22 2.30 2.44 2.50 3.00 RDS(ON) (MΩ) 16000 1700 180 19 2.0 0.21 0.022 0.008 0.002 0.001 0.0003 ALD910019 1.90 VIN (V) 1.50 1.60 1.70 1.80 1.90 2.00 2.12 2.20 2.34 2.40 2.90 RDS(ON) (MΩ) 15000 1600 170 18 1.9 0.20 0.021 0.007 0.002 0.001 0.0003 ALD910018 1.80 VIN (V) 1.40 1.50 1.60 1.70 1.80 1.90 2.02 2.10 2.24 2.30 2.80 RDS(ON) (MΩ) 14000 1500 160 17 1.8 0.19 0.020 0.007 0.002 0.001 0.0003 ALD910017 1.70 VIN (V) 1.30 1.40 1.50 1.60 1.70 1.80 1.92 2.00 2.14 2.20 2.70 RDS(ON) (MΩ) 13000 1400 150 16 1.7 0.18 0.019 0.007 0.002 0.001 0.0003 ALD910016 1.60 VIN (V) 1.20 1.30 1.40 1.50 1.60 1.70 1.82 1.90 2.04 2.10 2.60 RDS(ON) (MΩ) 12000 1300 140 15 1.6 0.17 0.018 0.007 0.002 0.001 0.0003 Notes: 1) The SAB MOSFET Output Current (IOUT) = Drain Source ON Current (IDS(ON)) and is the maximum current available to offset the supercapacitor leakage current. 2) The Input Voltage (VIN) = Drain Gate Source Voltage (VGS = VDS) and is normally the same as the voltage across the supercapacitor. Selection of an SAB MOSFET device depends on a set of desired voltage vs. current characteristics that closely match the supercapacitor operating VIN voltage and IOUT currents that provide the best leakage and regulation profile of a supercapacitor load. The table lists VIN which corresponds to different supercapacitor load voltages. At each VIN = VGS = VDS bias voltage, a corresponding IOUT, Drain Source ON Current, IDS(ON), is produced by a specific SAB MOSFET, which is equal to the amount of current available to compensate for supercapacitor leakage current inbalances. This current results in an Equivalent ON Resistance RDS(ON) across a supercapacitor cell. Selection of an SAB MOSFET part number operating at maximum supercapacitor operating voltage at an IOUT that corresponds to the maximum supercapacitor leakage current offer the best possible tradeoff between leakage current balancing and voltage regulation. |
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