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ALD8100XX Datasheet(PDF) 5 Page - Advanced Linear Devices

Part # ALD8100XX
Description  SUPERCAPACITOR AUTO BALANCING (SAB) MOSFET ARRAYS
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

ALD8100XX Datasheet(HTML) 5 Page - Advanced Linear Devices

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ALD8100XX/ALD9100XX SUPERCAPACITOR
Advanced Linear Devices, Inc.
5 of 17
AUTO BALANCING (SAB) MOSFET ARRAY FAMILY
In the graph titled “Input Voltage vs. Output Current”, locate the
VIN point as follows. First, find the Vt of the ALD810019 from the
SAB MOSFET Selection Table, which is 1.90V. Next, subtract 1.90V
from 2.42V, which is 0.52V. Check the IOUT current variation and
voltage variation as a function of temperature. If the temperature
variation allowance is 60mV, then the maximum supercap inbalance
voltage is 2.48V (2.42V + 0.06V) across temperature.
In cases where the supercapacitor leakage current is 1mA max.,
the ALD810019 is suggested. In cases where supercapacitor leak-
age currents are up to 3mA, then a part such as the ALD81016
can be used, although this may cause increased leakage current
through the SAB MOSFET itself. Another way to reduce leakage
currents would be to parallel connect mulitple ALD810019 devices
to auto-balance leakage currents greater than 1mA.
A 4.2V SUPERCAPACITOR STACK DESIGN EXAMPLE
A supply voltage of 4.2V across two supercapacitors gives 2.1V
across each supercapacitor cell. With a maximum leakage current
of 100µA for each cell at 2.22V maximum VIN cell voltage, the cor-
responding ALD part number is ALD910020SAL, a dual 8L SOIC
package.
The ALD910020 would support an IOUT (supercapacitor leakage
current) of 300µA at VIN = 2.30V; 100µA at VIN = 2.22V; 10µA at
VIN = 2.10V and 1µA at VIN = 2.00V, respectively. An inbalance
leakage current ratio between two supercapacitor cell units of 100µA
to 1µA, a 100 to 1 ratio, would produce one cell voltage of 2.22V
and the other cell voltage of 1.98V, which adds up to 4.20V. Simi-
larly, a lower supply voltage than 4.2V would be divided between
the two supercapacitors corresponding to their respective leakage
currents. Consider the case when the supply voltage is 4.10V, each
with an ALD910020 connected to it. If the leakage current ratio
between the supercapacitors remains the same, then one cell would
be biased at 2.22V (100µA) and the other would be biased at 1.88V
(4.10V - 2.22V). This would cause the ALD910020 to have a max.
leakage current contribution of less than 0.1µA.
PARALLEL-CONNECTED AND SERIES-CONNECTED SAB
MOSFETS
In the first design example on the previous page, note that the
ALD810026 is a quad pack, with four SAB MOSFETs in a single
SOIC package. For applications where two supercapacitors are
connected in series, the ALD9100xx dual SAB MOSFET is recom-
mended for charge balancing. If a two-stack supercapacitor re-
quires charge balancing, then there is also an option to parallel-
connect two additional SAB MOSFETs of the quad ALD8100xx for
each of the two supercapacitors. Parallel-connection means that
the drain, gate and source terminals of each of the two SAB
MOSFETs are connected together to form a single MOSFET with
twice the output current and twice the output current sensitivity to
voltage change. In this case, at an operating VIN voltage of 2.50V,
the additional IOUT current contribution by the SAB MOSFET is
equal to 2 x 0.1µA = 0.2µA. The total current for the combined
supercapacitor and SAB MOSFET is = 2.5µA + 0.2µA ~= 2.7µA @
2.50V operating voltage. At max. voltage of 2.70V across the SAB
MOSFET, VIN = 2.70V results in a IOUT of 2 x 10µA = 20µA. So
this configuration would be chosen to increase max. supercapacitor
charge balancing leakage current at 2.70V to 20µA, at the expense
of an additional 0.1µA IOUT leakage at 2.50V.
For stacks of series-connected supercapacitors consisting of more
than three or four cells, it is possible to use a single SAB MOSFET
array for every supercapacitor stack (up to 4 cells) connected in
series. Multiple SAB MOSFET arrays can be arrayed across mul-
tiple supercapacitor stacks to operate at higher operating voltages.
It is only important to limit the voltage across any two pins within a
single SAB MOSFET array package to be less than its absolute
maximum voltage and current ratings.
LOW LEAKAGE ENERGY HARVESTING APPLICATIONS
Supercapacitors offer an important benefit in energy harvesting ap-
plications with a high impedance energy source, in buffering and
storing such energy to drive a higher power load.
For energy harvesting applications, supercapacitor leakage cur-
rents are a critical design parameter, as the average energy har-
vesting input charge must exceed the average supercapacitor in-
ternal leakage currents in order for any net energy to be harvested.
When the input energy is a variable, meaning that its input voltage
and current magnitude is not constant and dependent upon other
parameters such as the source energy availability (energy sensor
conversion efficiency, etc.), the energy harvested and stored must
supply and exceed the necessary leakage currents, which tend to
be steady DC currents.
In these types of applications, in order to minimize the amount of
energy loss due to leakage currents, it is essential to choose
supercapacitors with low leakage specifications and to use SAB
MOSFETs to balance them.
For the first 90% of the initial voltages of a supercapacitor used in
energy harvesting applications, supercapacitor charge loss is lower
than its maximum leakage rating, at less than its max. rated volt-
age. SAB MOSFETs, used for charge balancing, would be com-
pletely turned off, consuming zero leakage current while the
supercapacitor is being charged, maximizing any energy harvest-
ing gathering efforts. The SAB MOSFET would not become active
until the supercapacitor is already charged to over 90% of its max.
rated voltage. The trickle charging of supercapacitors with energy
harvesting techniques tends to work well with SAB MOSFETs as
charge balancing devices, as it is less likely to have high transient
energy spurts resulting in excessive voltage or current excursions.
If an energy harvesting source only provides a few µA of current,
the power budget would not allow wasting any of this current on
capacitor leakage currents, and on many other conventional charge
balancing methods. Resistors or operational amplifiers used as
charge-balancing circuits would dissipate far more energy than
desired. It may also be an important consideration to reduce long
term DC leakage currents as energy harvesting charging at low
levels may take up to many days.
In summary, in order for an energy harvesting application to be
successful, the input energy harvested must exceed all the energy
spent, due to the leakages of the supercapacitors and the charge-
balancing circuits, plus any load requirements. With their unique
balancing characteristics and near-zero charge loss, SAB MOSFETs
are ideal devices to use for supercapacitor charge-balancing within
energy harvesting applications.
LONG TERM BACKUP BATTERY APPLICATIONS
Similar to energy harvesting applications, any low leakage long-
term application, such as a long-term backup battery requiring
supercapacitors at the output to reduce output impedance and to
boost its output power, would benefit from SAB MOSFET deploy-
ment. Over a long time span, reducing leakge currents is an impor-
tant design parameter. For example, a low DC leakage current of
just 1µA over 5 years translates into 44.8mAhr of energy lost.
ALD8100XX/ALD9100XX FAMILY GENERAL DESCRIPTION (cont.)


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