RJF0411JPD

R07DS1258EJ0100 Rev.1.00

Page 2 of 7

Jun 23, 2015

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Input voltage

3.5

—

—

V

—

—

1.2

V

Input current

(Gate non shut down)

—

—

100

A

—

—

50

A

—

—

1

A

Input current

(Gate shut down)

—

0.8

—

mA

—

0.35

—

mA

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

12

V

Drain current

(Current limitation value)

34

—

—

A

Tc ≤ 80

C

Note: 4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain current

—

—

40

A

—

—

10

mA

34

—

—

A

Tc ≤ 80

C

34

—

—

A

Tc ≤ 80

C

Drain to source breakdown voltage

40

—

—

V

Gate to source breakdown voltage

16

—

—

V

–2.5

—

—

V

Gate to source leak current

—

—

100

A

—

—

50

A

—

—

1

A

—

—

–100

A

Input current (shut down)

—

0.8

—

mA

—

0.35

—

mA

Zero gate voltage drain current

—

—

10

A

C

Gate to source cutoff voltage

1.1

—

2.1

V

Forward transfer admittance

12

21.9

—

S

Static drain to source

on state resistance

—

29.9

43

m



—

23.8

37

m



Output capacitance

Coss

—

416

—

pF

Turn-on delay time

—

3

—

s



Rise time

—

12.8

—

s

Turn-off delay time

—

4

—

s

Fall time

—

9.9

—

s

Body-drain diode forward voltage

—

0.96

—

V

Body-drain diode

reverse recovery time

—

109

—

ns

s

Over load shut down

—

0.26

—

ms

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.