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TLV76050DBZT Datasheet(PDF) 4 Page - Texas Instruments |
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TLV76050DBZT Datasheet(HTML) 4 Page - Texas Instruments |
4 / 25 page 4 TLV760 SNVSAV1 – JUNE 2017 www.ti.com Product Folder Links: TLV760 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings(1) may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) See Recommended Operating Conditions section for more details. 6 Specifications 6.1 Absolute Maximum Ratings (1) MIN MAX UNIT Input voltage (IN to GND) –0.3 35 V Output Voltage (OUT) VIN + 0.3 V Output Current Internally limited(2) mA Junction temperature –40 150 °C Storage temperature, Tstg −65 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Maximum input voltage (IN to GND) 30 V Output current (IOUT) 100 mA Input and output capacitor (COUT) 0.1 µF Junction temperature, TJ –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC(1) TLV760 UNIT DBZ (SOT-23) 3 PINS RθJA Junction-to-ambient thermal resistance 275.2 °C/W RθJC(top) Junction-to-case (top) thermal resistance 92.8 °C/W RθJB Junction-to-board thermal resistance 56.8 °C/W ψJT Junction-to-top characterization parameter 2.9 °C/W ψJB Junction-to-board characterization parameter 55.6 °C/W |
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