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NP29N06QUK-E1-AY Datasheet(PDF) 1 Page - Renesas Technology Corp

Part # NP29N06QUK-E1-AY
Description  60 V ??30 A ??Dual N-channel Power MOS FET
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

NP29N06QUK-E1-AY Datasheet(HTML) 1 Page - Renesas Technology Corp

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R07DS1331EJ0100 Rev.1.00
Page 1 of 7
Mar 28, 2016
Data Sheet
NP29N06QUK
60 V – 30 A – Dual N-channel Power MOS FET
Application: Automotive
Description
NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ R
DS(on) = 21 mΩ MAX. (VGS = 10 V, ID = 15 A)
• Low C
iss: Ciss = 1000 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
• Small size package 8-pin HSON dual
Outline
Source 1
Body
Diode
Body
Diode
Gate 1
Drain 1
Source 2
Gate 2
Drain 2
8-pin HSON dual
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
Lead Plating
Packing
Package
NP29N06QUK-E1-AY *
1
Pure Sn (Tin)
Tape 2500 p/reel
Taping (E1 type)
8-pin HSON dual
NP29N06QUK -E2-AY *
1
Taping (E2 type)
Note: *1. Pb-free (This product does not contain Pb in the external electrode)
R07DS1331EJ0100
Rev.1.00
Mar 28, 2016


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