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NP29N06QUK-E1-AY Datasheet(PDF) 1 Page - Renesas Technology Corp |
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NP29N06QUK-E1-AY Datasheet(HTML) 1 Page - Renesas Technology Corp |
1 / 9 page R07DS1331EJ0100 Rev.1.00 Page 1 of 7 Mar 28, 2016 Data Sheet NP29N06QUK 60 V – 30 A – Dual N-channel Power MOS FET Application: Automotive Description NP29N06QUK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ R DS(on) = 21 mΩ MAX. (VGS = 10 V, ID = 15 A) • Low C iss: Ciss = 1000 pF TYP. (VDS = 25 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON dual Outline Source 1 Body Diode Body Diode Gate 1 Drain 1 Source 2 Gate 2 Drain 2 8-pin HSON dual Equivalent circuit Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Ordering Information Part No. Lead Plating Packing Package NP29N06QUK-E1-AY * 1 Pure Sn (Tin) Tape 2500 p/reel Taping (E1 type) 8-pin HSON dual NP29N06QUK -E2-AY * 1 Taping (E2 type) Note: *1. Pb-free (This product does not contain Pb in the external electrode) R07DS1331EJ0100 Rev.1.00 Mar 28, 2016 |
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