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ALD212908ASAL Datasheet(PDF) 1 Page - Advanced Linear Devices

Part # ALD212908ASAL
Description  PRECISION N-CHANNEL EPAD MOSFET ARRAY DUAL HIGH DRIVE MATCHED PAIR
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Manufacturer  ALD [Advanced Linear Devices]
Direct Link  http://www.aldinc.com
Logo ALD - Advanced Linear Devices

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©2017 Advanced Linear Devices, Inc., Vers. 1.2
www.aldinc.com
1 of 12
e
EPAD
TM
®
N A
B L
E D
E
ADVANCED
LINEAR
DEVICES, INC.
GENERAL DESCRIPTION
The ALD212908A/ALD212908 precision enhancement mode N-Channel EPAD
®
MOSFET array is precision matched at the factory using ALD’s proven EPAD
®
CMOS technology. These quad monolithic devices are enhanced additions to
the ALD212908A/ALD212908 EPAD
® MOSFET Family, with increased forward
transconductance and output conductance, particularly at very low supply volt-
ages.
Intended for low voltage, low power small signal applications, the ALD212908A/
ALD212908 features precision threshold voltage, which enables circuit designs
with input/output signals referenced to enhanced operating voltage ranges. With
these devices, a circuit with multiple cascading stages can be built to operate at
extremely low supply/bias voltage levels. For example, a nanopower input am-
plifier stage operating at less than 1.0V supply voltage has been successfully
built with these devices.
ALD212908A EPAD MOSFETs feature exceptional matched pair electrical char-
acteristics of Gate Threshold Voltage VGS(th) set precisely at +0.80V +0.01V,
IDS = +20µA @ VDS = 0.1V, with a typical offset voltage of only +0.001V (1mV).
Built on a single monolithic chip, they also exhibit excellent temperature track-
ing characteristics. These precision devices are versatile as design components
for a broad range of analog small signal applications such as basic building
blocks for current mirrors, matching circuits, current sources, differential ampli-
fier input stages, transmission gates, and multiplexers. They also excel in lim-
ited operating voltage applications, such as very low level voltage-clamps and
nano-power normally-on circuits.
In addition to precision matched-pair electrical characteristics, each individual
EPAD MOSFET also exhibits well controlled manufacturing characteristics, en-
abling the user to depend on tight design limits from different production batches.
These devices are built for minimum offset voltage and differential thermal re-
sponse, and they can be used for switching and amplifying applications in +0.1V
to +10V (+0.05V to +5V) powered systems where low input bias current, low
input capacitance, and fast switching speed are desired. At VGS > +0.80V, the
device exhibits enhancement mode characteristics whereas at VGS < +0.80V
the device operates in the subthreshold voltage region and exhibits conven-
tional sub threshold characteristics, with well controlled turn-off and sub-thresh-
old levels that operate the same as standard enhancement mode MOSFETs.
The ALD212908A/ALD212908 features high input impedance (2.5 x 1010Ω) and
high DC current gain (>108). A sample calculation of the DC current gain at a
drain output current of 30mA and input current of 300pA at 25°C is 30mA/300pA
= 100,000,000, which translates into a dynamic operating current range of about
eight orders of magnitude. A series of four graphs titled “Forward Transfer Char-
acteristics”, with the 2nd and 3rd sub-titled “expanded (subthreshold)” and “fur-
ther expanded (subthreshold)”, and the 4th sub-titled “low voltage”, illustrates
the wide dynamic operating range of these devices.
Generally it is recommended that the V+ pin be connected to the most positive
voltage and the V- and IC (internally-connected) pins to the most negative volt-
age in the system. All other pins must have voltages within these voltage limits
at all times. Standard ESD protection facilities and handling procedures for static
sensitive devices are highly recommended when using these devices.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY
DUAL HIGH DRIVE MATCHED PAIR
FEATURES & BENEFITS
• Precision VGS(th) = +0.80V +0.010V
• VOS (VGS(th) match) to 2mV/10mV max.
• Sub-threshold voltage (nano-power) operation
• < 800mV min. operating voltage
• < 1nA min. operating current
• < 1nW min. operating power
• > 100,000,000:1 operating current ranges
• High transconductance and output conductance
• Low RDS(ON) of 14Ω
• Output current > 50mA
• Matched and tracked tempco
• Tight lot-to-lot parametric control
• Positive, zero, and negative VGS(th) tempco
• Low input capacitance and leakage currents
APPLICATIONS
• Low overhead current mirrors and current sources
• Zero Power Normally-On circuits
• Energy harvesting circuits
• Very low voltage analog and digital circuits
• Zero power fail-safe circuits
• Backup battery circuits & power failure detector
• Extremely low level voltage-clamps
• Extremely low level zero-crossing detector
• Matched source followers and buffers
• Precision current mirrors and current sources
• Matched capacitive probes and sensor interfaces
• Charge detectors and charge integrators
• High gain differential amplifier input stage
• Matched peak-detectors and level-shifters
• Multiple Channel Sample-and-Hold switches
• Precision Current multipliers
• Discrete matched analog switches/multiplexers
• Nanopower discrete voltage comparators
ALD212908A/ALD212908
VGS(th)= +0.08V
*IC pins are internally connected, connect to V-
SAL, PAL PACKAGES
PIN CONFIGURATION
ALD212908
V-
GN1
DN1
S12
DN2
GN2
1
2
3
6
7
8
4
5
M 1
M 2
V-
V-
V-
IC*
V+
ORDERING INFORMATION (“L” suffix denotes lead-free (RoHS))
*Contact factory for industrial temp. range or user-specified threshold voltage values.
Operating Temperature Range *
0°C to +70°C
8-Pin SOIC Package
8-Pin Plastic Dip Package
ALD212908ASAL
ALD212908APAL
ALD212908SAL
ALD212908PAL


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