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LMX2595RHAT Datasheet(PDF) 5 Page - Texas Instruments |
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LMX2595RHAT Datasheet(HTML) 5 Page - Texas Instruments |
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5 / 70 page  5 LMX2595 www.ti.com SNAS736 – JUNE 2017 Product Folder Links: LMX2595 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT VCC Power supply voltage –0.3 3.6 V TJ Junction temperature –40 150 °C Tstg Storage temperature –65 150 °C (1) JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500 V HBM is possible with the necessary precautions. Pins listed as ±XXX V may actually have higher performance. (2) JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250 V CDM is possible with the necessary precautions. Pins listed as ±YYY V may actually have higher performance. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V Charged-device model (CDM), per JEDEC specification JESD22- C101(2) ±750 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT VCC Power supply voltage 3.15 3.3 3.45 V TA Ambient temperature –40 25 85 °C TJ Junction Temperature 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. (2) DAP 6.4 Thermal Information THERMAL METRIC(1) LMX2595 UNIT RHA (VQFN) 40 PINS RθJA Junction-to-ambient thermal resistance 30.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance (2) 15.3 °C/W RθJB Junction-to-board thermal resistance 5.4 °C/W ψJT Junction-to-top characterization parameter 0.2 °C/W ψJB Junction-to-board characterization parameter 5.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance 0.9 °C/W |
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