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HAT3021R Datasheet(PDF) 7 Page - Renesas Technology Corp

Part # HAT3021R
Description  Silicon N/P Channel Power MOS FET Power Switching
Download  12 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3021R Datasheet(HTML) 7 Page - Renesas Technology Corp

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HAT3021R
page 7 of 10
• P Channel
4.0
3.0
2.0
1.0
0
50
100
150
200
10
1
0.1
110
100
–5.0
–2.5
0–5
–10
–5
–4
–3
–2
–1
0
–2
–4
–6
–8
–10
0.01
100
VGS = -2.8 V
Tc = 75
°C
25
°C
−25°C
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
Drain to Source Voltage VDS
(V)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage
VGS
(V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
-3.0 V
-4.5 V
-10 V
0.1
0.001
100
µs
1 ms
PW
= 10
ms
(1shot)
Ta = 25
°C
1 shot Pulse
10
µs
Note
4
DC
Opera
tion
(PW
≤ 10
s)
Operation in
this area is
limited by RDS(on)
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
–1000
–600
–800
–400
–200
0
–4
–8
–20
–12
–16
–0.1
–1
–10
100
10
ID = –2 A
–1 A
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
Pulse Test
Pulse Test
–0.5 A
1000
VGS = –4.5 V
–10 V


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