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HAT3021R Datasheet(PDF) 7 Page - Renesas Technology Corp |
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HAT3021R Datasheet(HTML) 7 Page - Renesas Technology Corp |
7 / 12 page HAT3021R page 7 of 10 • P Channel 4.0 3.0 2.0 1.0 0 50 100 150 200 10 1 0.1 110 100 –5.0 –2.5 0–5 –10 –5 –4 –3 –2 –1 0 –2 –4 –6 –8 –10 0.01 100 VGS = -2.8 V Tc = 75 °C 25 °C −25°C Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test -3.0 V -4.5 V -10 V 0.1 0.001 100 µs 1 ms PW = 10 ms (1shot) Ta = 25 °C 1 shot Pulse 10 µs Note 4 DC Opera tion (PW ≤ 10 s) Operation in this area is limited by RDS(on) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) –1000 –600 –800 –400 –200 0 –4 –8 –20 –12 –16 –0.1 –1 –10 100 10 ID = –2 A –1 A Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Pulse Test –0.5 A 1000 VGS = –4.5 V –10 V |
Similar Part No. - HAT3021R_16 |
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Similar Description - HAT3021R_16 |
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