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HAT2210R-EL-E Datasheet(PDF) 6 Page - Renesas Technology Corp |
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HAT2210R-EL-E Datasheet(HTML) 6 Page - Renesas Technology Corp |
6 / 12 page HAT2210R R07DS1368EJ0301 Rev.3.01 Page 6 of 10 Jan 20, 2017 • MOS 2 & Schottky Barrier Diode 4.0 3.0 2.0 1.0 0 50 100 150 200 100 10 1 110 100 20 10 05 10 20 10 0 24 68 10 0.1 1000 VGS = 2.4 V Tc = 75 °C 25 °C −25°C Ambient Temperature Ta ( °C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Pulse Test Gate to Source Voltage VGS (V) Typical Transfer Characteristics VDS = 10 V Pulse Test 2.8 V 3.0 V 2.6 V 4.5 V 10 V 0.1 0.01 100 μs 1 ms PW = 10 ms (1shot) Ta = 25 °C 1 shot Pulse 10 μs Note 4 DC Opera tion (PW ≤ 10 s) Operation in this area is limited by RDS(on) Test Condition : When using the glass epoxy board (FR4 40x40x1.6 mm), PW < 10 s Note 4 : When using the glass epoxy board (FR4 40x40x1.6 mm) 200 150 100 50 0 24 6 812 10 0.1 1 10 10 1 ID = 5 A 2 A Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current Pulse Test Pulse Test 1 A 100 100 VGS = 4.5 V 10 V |
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