Rev.1.01, Feb.23.2017, page 1 of 13

R1LV1616HBG-I Series

Wide Temperature Range Version

16 M SRAM (1-Mword

 16-bit)

REJ03C0263-0101

Rev. 1.01

Feb.23.2017

Description

The R1LV1616HBG-I Series is 16-Mbit static RAM organized 1-Mword

 16-bit with embedded ECC.

R1LV1616HBG-I Series has realized higher density, higher performance and low power consumption by employing

CMOS process technology (6-transistor memory cell). It offers low power standby power dissipation; therefore, it is

suitable for battery backup systems. It is packaged in 48-ball plastic FBGA for high density surface mounting.

Features

 Single 3.0 V supply: 2.7 V to 3.6 V

 Fast access time: 45/55 ns (max)

 Power dissipation:

 Active: 9 mW/MHz (typ)

 Standby: 1.5 W (typ)

 Completely static memory.

 No clock or timing strobe required

 Equal access and cycle times

 Common data input and output.

 Three state output

 Battery backup operation.

 2 chip selection for battery backup

 Temperature range: 40 to +85C

 Embedded ECC (error checking and correction) for single-bit error correction

Ordering Information

Type No.

Access time

Package

R1LV1616HBG-4SI

45 ns

48-ball plastic FBGA with 0.75 mm ball pitch

R1LV1616HBG-5SI

55 ns

PTBG0048HF (48FHJ)