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R1LV1616HSA-4SI Datasheet(PDF) 11 Page - Renesas Technology Corp

Part # R1LV1616HSA-4SI
Description  16 M SRAM (1-Mword x 16-bit / 2-Mword x 8-bit)
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

R1LV1616HSA-4SI Datasheet(HTML) 11 Page - Renesas Technology Corp

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R1LV1616HSA-I Series
Rev.1.02, Feb.23.2017, page 11 of 19
Read Cycle
R1LV1616HSA-I
-4SI
-5SI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
45

55

ns
Address access time
tAA

45

55
ns
Chip select access time
tACS1

45

55
ns
tACS2

45

55
ns
Output enable to output valid
tOE

30

35
ns
Output hold from address change
tOH
10

10

ns
LB#, UB# access time
tBA

45

55
ns
Chip select to output in low-Z
tCLZ1
10

10

ns
2, 3
tCLZ2
10

10

ns
2, 3
LB#, UB# enable to low-Z
tBLZ
5

5

ns
2, 3
Output enable to output in low-Z
tOLZ
5

5

ns
2, 3
Chip deselect to output in high-Z
tCHZ1
0
20
0
20
ns
1, 2, 3
tCHZ2
0
20
0
20
ns
1, 2, 3
LB#, UB# disable to high-Z
tBHZ
0
15
0
20
ns
1, 2, 3
Output disable to output in high-Z
tOHZ
0
15
0
20
ns
1, 2, 3
Write Cycle
R1LV1616HSA-I
-4SI
-5SI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Write cycle time
tWC
45

55

ns
Address valid to end of write
tAW
45

50

ns
Chip selection to end of write
tCW
45

50

ns
5
Write pulse width
tWP
35

40

ns
4
LB#, UB# valid to end of write
tBW
45

50

ns
Address setup time
tAS
0

0

ns
6
Write recovery time
tWR
0

0

ns
7
Data to write time overlap
tDW
25

25

ns
Data hold from write time
tDH
0

0

ns
Output active from end of write
tOW
5

5

ns
2
Output disable to output in high-Z
tOHZ
0
15
0
20
ns
1, 2
Write to output in high-Z
tWHZ
0
15
0
20
ns
1, 2


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