PHB38N02LT datasheet(5/13 Pages) PHILIPS

Part #	PHB38N02LT

Description	TrenchMOS logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHB/PHD38N02LT

TrenchMOS™ logic level FET

Product data

Rev. 01 — 30 June 2003

5 of 13

9397 750 11614

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

20

--V

Tj = −55 °C

18

--V

VGS(th)

gate-source threshold voltage

ID = 250 µA; VDS =VGS; Figure 9

Tj =25 °C

0.5

1

1.5

V

Tj = 175 °C

0.3

-

V

Tj = −55 °C

-

1.8

V

IDSS

drain-source leakage current

VDS =20V; VGS =0V

Tj =25 °C

-

0.05

1

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±12 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS =5V; ID =25A; Figure 7 and 8

Tj =25 °C

-

13.5

16

m

Ω

Tj = 175 °C

-

24.3

28.8

m

Ω

VGS = 2.5 V; ID =8A; Figure 8

-

2030m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 25 A; VDD =10V; VGS =5V; Figure 13

-

15.1

-

nC

Qgs

gate-source charge

-

4.5

-

nC

Qgd

gate-drain (Miller) charge

-

4.2

-

nC

Ciss

input capacitance

VGS =0V; VDS = 20 V; f = 1 MHz; Figure 11

-

800

-

pF

Coss

output capacitance

-

260

-

pF

Crss

reverse transfer capacitance

-

190

-

pF

td(on)

turn-on delay time

VDD =10V; ID = 25 A; VGS = 10 V; RG = 5.6 Ω

-4

-ns

tr

rise time

-

12.5

-

ns

td(off)

turn-off delay time

-

30

-

ns

tf

fall time

-23

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12

-

0.98

1.2

V

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