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K4J55323QF-GC15 Datasheet(PDF) 8 Page - Samsung semiconductor |
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K4J55323QF-GC15 Datasheet(HTML) 8 Page - Samsung semiconductor |
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8 / 49 page  - 8 - 256M GDDR3 SDRAM K4J55323QF-GC Rev 1.8 (Apr. 2005) Self Auto Idle MRS EMRS Row Precharge Power Write Power ACT Read A Read REFS REFSX REFA CKEL MRS CKEH CKEH CKEL Write Power Applied Automatic Sequence Command Sequence Read A Write A Read PRE PRE PRE PRE Refresh Refresh Down Power Down Active On A Read A Read A Write A PREALL Active Precharge Precharge PREALL Read Write PREALL = Precharge All Banks MRS = Mode Register Set EMRS = Extended Mode Register Set REFS = Enter Self Refresh REFSX = Exit Self Refresh REFA = Auto Refresh CKEL = Enter Power Down CKEH = Exit Power Down ACT = Active Write A = Write with Autoprecharge Read A = Read with Autoprecharge PRE = Precharge FUNCTIONAL DESCRIPTION Simplified State Diagram Write |
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