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IRG4IBC30KD Datasheet(PDF) 3 Page - International Rectifier

Part No. IRG4IBC30KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 3 page
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IRG4IBC30KD
www.irf.com
3
0.1
1
10
100
0
2
4
6
8
10
12
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
For both:
D uty cy cle: 50%
T = 12 5 °C
T
= 90 °C
G a te drive as specifie d
sin k
J
P ow e r Dis sip ation =
W
6 0% of rate d
volta ge
I
Ideal diodes
S qua re w a v e :
13
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
0.1
1
10
100
1
10
V
, Collector-to-Emitter Voltage (V)
CE

V
= 15V
20µs PULSE WIDTH
GE

T = 25 C
J
o

T = 150 C
J
o
0.1
1
10
100
5
10
15
V
, Gate-to-Emitter Voltage (V)
GE

V
= 50V
5µs PULSE WIDTH
CC

T = 25 C
J
o

T = 150 C
J
o




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