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ESD8351 Datasheet(PDF) 2 Page - ON Semiconductor |
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ESD8351 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 9 page ESD8351, SZESD8351 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter VRWM Working Peak Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current VHOLD Holding Reverse Voltage IHOLD Holding Reverse Current RDYN Dynamic Resistance IPP Maximum Peak Pulse Current VC Clamping Voltage @ IPP VC = VHOLD + (IPP * RDYN) I V VCVRWMVHOLD VBR RDYN VC IR IT IHOLD −IPP RDYN IPP VC = VHOLD + (IPP * RDYN) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM I/O Pin to GND 3.3 V Breakdown Voltage VBR IT = 1 mA, I/O Pin to GND 5.5 7.0 7.8 V Reverse Leakage Current IR VRWM = 3.3 V, I/O Pin to GND 500 nA Holding Reverse Voltage VHOLD I/O Pin to GND 1.15 V Holding Reverse Current IHOLD I/O Pin to GND 20 mA Clamping Voltage TLP (Note 2) See Figures 1 through 11 VC IPP = 8 A IEC 61000−4−2 Level 2 equivalent ( ±4 kV Contact, ±4 kV Air) 6.5 V IPP = 16 A IEC 61000−4−2 Level 4 equivalent ( ±8 kV Contact, ±15 kV Air) 11.2 Clamping Voltage (Note 3) VC IPP = 5 A tp = 8 x 20 ms 8.2 V Dynamic Resistance RDYN Pin1 to Pin2 Pin2 to Pin1 0.62 0.59 W Junction Capacitance CJ VR = 0 V, f = 1 Mhz VR = 0 V, f = 2.5 Ghz 0.37 0.35 0.55 0.45 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 8 and 9 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. 3. Non−repetitive current pulse at TA = 20°C, per IEC 61000−4−5 waveform. |
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Similar Description - ESD8351_16 |
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