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ESD8351 Datasheet(PDF) 2 Page - ON Semiconductor

Part # ESD8351
Description  ESD Protection Diodes
Download  9 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ESD8351 Datasheet(HTML) 2 Page - ON Semiconductor

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ESD8351, SZESD8351
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
VRWM
Working Peak Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
VHOLD
Holding Reverse Voltage
IHOLD
Holding Reverse Current
RDYN
Dynamic Resistance
IPP
Maximum Peak Pulse Current
VC
Clamping Voltage @ IPP
VC = VHOLD + (IPP * RDYN)
I
V
VCVRWMVHOLD
VBR
RDYN
VC
IR
IT
IHOLD
−IPP
RDYN
IPP
VC = VHOLD + (IPP * RDYN)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
3.3
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
5.5
7.0
7.8
V
Reverse Leakage Current
IR
VRWM = 3.3 V, I/O Pin to GND
500
nA
Holding Reverse Voltage
VHOLD
I/O Pin to GND
1.15
V
Holding Reverse Current
IHOLD
I/O Pin to GND
20
mA
Clamping Voltage
TLP (Note 2)
See Figures 1 through 11
VC
IPP = 8 A
IEC 61000−4−2 Level 2 equivalent
(
±4 kV Contact, ±4 kV Air)
6.5
V
IPP = 16 A
IEC 61000−4−2 Level 4 equivalent
(
±8 kV Contact, ±15 kV Air)
11.2
Clamping Voltage (Note 3)
VC
IPP = 5 A
tp = 8 x 20 ms
8.2
V
Dynamic Resistance
RDYN
Pin1 to Pin2
Pin2 to Pin1
0.62
0.59
W
Junction Capacitance
CJ
VR = 0 V, f = 1 Mhz
VR = 0 V, f = 2.5 Ghz
0.37
0.35
0.55
0.45
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. For test procedure see Figures 8 and 9 and application note AND8307/D.
2. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns.
3. Non−repetitive current pulse at TA = 20°C, per IEC 61000−4−5 waveform.


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