Q67040-S4291 datasheet(8/12 Pages) INFINEON

Part #	Q67040-S4291

Description	Fast S-IGBT in NPT-technology

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Manufacturer	INFINEON [Infineon Technologies AG]

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Preliminary

SGP02N120

SGB02N120, SGD02N120

Power Semiconductors

8

Mar-00

0nC

5nC

10nC

15n

0V

5V

10V

15V

20V

U

CE=960V

0V

10V

20V

30V

10pF

100pF

C

rss

C

oss

C

iss

QGE, GATE CHARGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

(IC = 2A)

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

10V

11V

12V

13V

14V

15V

0

µs

5

µs

10

µs

15

µs

20

µs

25

µs

30

µs

10V

12V

14V

16V

18V

20V

0A

10A

20A

30A

40A

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 1200V, start at Tj = 25

°C)

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(100V

≤V

CE

≤1200V, T

C = 25

°C, T

j

≤ 150°C)

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Q67040-S4291 Datasheet(PDF) 8 Page - Infineon Technologies AG

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