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Q67040-S4271 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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Q67040-S4271 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 12 page  Preliminary SGP02N120 SGB02N120, SGD02N120 Power Semiconductors 2 Mar-00 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, junction – case R thJC 2.0 Thermal resistance, junction – ambient R thJA TO-220AB 62 SMD version, device on PCB 1) R thJA TO-263AB(D2PAK) 40 K/W Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Value Parameter Symbol Conditions min. typ. max. Unit Static Characteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC =100 µA 1200 - - Collector-emitter saturation voltage VCE(sat ) VGE = 15 V, IC =2A T j =2 5 °C T j =150 °C 2.5 - 3.1 3.7 3.6 4.3 Gate-emitter threshold voltage VGE(th) I C =100 µA,V CE = V GE 34 5 V Zero gate voltage collector current I CE S VCE =1200V, VGE =0V T j =2 5 °C T j =150 °C - - - - 25 100 µA Gate-emitter leakage current I GE S VCE =1200V, VGE =0V - - 100 nA Transconductance g fs VCE =20V, IC =2A 1.5 - S Dynamic Characteristic Input capacitance C iss - 205 250 Output capacitance C os s -28 34 Reverse transfer capacitance C rs s VCE =25V, VGE =0V, f =1M H z -17 21 pF Gate charge Q Gat e VCC =960V, I C =2 A VGE =15V -11 - nC Internal emitter inductance measured 5mm (0.197 in.) from case L E TO - 2 2 0 A B - 7 - nH Short circuit collector current 2) I C( SC ) VGE =15V,t SC ≤10µs 1 00V ≤V CC ≤1200V, T j ≤ 150°C -24 - A 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. |
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