2SK3342 datasheet(2/3 Pages) TOSHIBA

Part #	2SK3342

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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2 / 3 page

2SK3342

2002-01-25

2

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±16 V, VDS = 0 V

—

±10

µA

Drain cut−off current

IDSS

VDS = 250 V, VGS = 0 V

—

100

µA

Drain−source breakdown voltage

V (BR) DSS

ID = 10 mA, VGS = 0 V

250

—

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 1 mA

1.5

—

3.5

V

Drain−source ON resistance

RDS (ON)

VGS = 10 V, ID = 2.5 A

—

0.8

1.0

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

2.0

4.5

—

S

Input capacitance

Ciss

—

440

—

Reverse transfer capacitance

Crss

—

35

—

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

—

120

—

pF

Rise time

tr

—

15

—

Turn−on time

ton

—

20

—

Fall time

tf

—

15

—

Switching time

Turn−off time

toff

—

60

—

ns

Total gate charge (Gate−source

plus gate−drain)

Qg

—

10

—

Gate−source charge

Qgs

—

6

—

Gate−drain (“miller”) charge

Qgd

VDD ≈ 100 V, VGS = 10 V, ID = 4.5 A

—

4

—

nC

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

IDR

—

4.5

A

Pulse drain reverse current

(Note 1)

IDRP

—

18

A

Forward voltage (diode)

VDSF

IDR = 4.5 A, VGS = 0 V

—

−2.0

V

Reverse recovery time

trr

—

110

—

ns

Reverse recovery charge

Qrr

IDR = 4.5 A, VGS = 0 V

dIDR / dt = 100 A / µs

—

0.47

—

µC

Marking

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