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2SC5812 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SC5812 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
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3 / 10 page  2SC5812 Rev.0, Nov. 2001, page 3 of 10 100 80 60 40 20 0 50 100 150 200 250 Ambient Temperature Ta (˚C) Collector Power Dissipation Curve 20 15 10 5 01 2 3 4 Collector to Emitter Voltage VCE (V) Typical Output Characteristics 25 20 15 10 5 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Typical Transfer Characteristics 200 100 0 0.1 1.0 10 100 Collector Current IC (mA) DC Current Transfer Ratio vs. Collector Current IB = 20 µA 40 µA 60 µA 80 µA 100 µA 120 µA 140 µA 160 µA VCE = 1 V VCE = 1 V |
Similar Part No. - 2SC5812 |
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