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UNR911MJ Datasheet(PDF) 3 Page - Panasonic Semiconductor |
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UNR911MJ Datasheet(HTML) 3 Page - Panasonic Semiconductor |
3 / 19 page 3 UNR911xJ Series SJH00038BED ■ Electrical Characteristics (continued) T a = 25°C ± 3°C Characteristics charts of UNR9110J IC VCE VCE(sat) IC hFE IC Common characteristics chart PT Ta 0 0 160 40 120 80 150 125 100 75 50 25 Ambient temperature T a (°C) 0 0 −12 −2 −10 −4 −8 −6 −120 −100 −80 −60 −40 −20 Ta = 25°C IB = −1.0 mA − 0.9 mA − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA − 0.4 mA − 0.3mA − 0.2mA − 0.1mA Collector-emitter voltage V CE (V) −10 −2 −10 −1 −10 −1 −1 −10 −102 −1 −10 −102 IC / IB = 10 Ta = 75°C 25 °C −25°C Collector current I C (mA) 0 −1 100 200 300 400 −10 −102 −103 VCE = –10 V Ta = 75°C 25 °C −25°C Collector current I C (mA) Parameter Symbol Conditions Min Typ Max Unit Emitter-base resistance UNR911CJ R2 −30% 47 +30% k Ω Resistance UNR911MJ R1/R2 0.047 ratio UNR911NJ 0.1 UNR9118J/9119J 0.08 0.10 0.12 UNR9114J 0.17 0.21 0.25 UNR911HJ 0.17 0.22 0.27 UNR911TJ 0.47 UNR911FJ 0.37 0.47 0.57 UNR911AJ/911VJ 1.0 UNR9111J/9112J/9113J/911LJ 0.8 1.0 1.2 UNR911EJ 1.70 2.14 2.60 UNR911DJ 3.7 4.7 5.7 Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. |
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