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UNR9115J Datasheet(PDF) 2 Page - Panasonic Semiconductor |
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UNR9115J Datasheet(HTML) 2 Page - Panasonic Semiconductor |
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2 / 19 page  2 UNR911xJ Series SJH00038BED ■ Electrical Characteristics T a = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Collector-base cutoff current (Emitter open) ICBO VCB = −50 V, I E = 0 − 0.1 µA Collector-base cutoff current (Emitter open) ICEO VCE = −50 V, IB = 0 − 0.5 µA Emitter-base UNR9115J/9116J/9117J/911BJ IEBO VEB = −6 V, IC = 0 − 0.01 mA cutoff current UNR9110J/9113J/911AJ − 0.1 (Collector UNR9112J/9114J/911DJ/ − 0.2 open) 911EJ/911MJ/911NJ/911TJ UNR9111J − 0.5 UNR911FJ/911HJ −1.0 UNR9119J −1.5 UNR9118J/911CJ/911LJ/911VJ −2.0 Forward UNR911VJ hFE VCE = −10 V, IC = −5 mA 6 20 current UNR9118J/911LJ 20 transfer UNR9119J/911DJ/911FJ/911HJ 30 ratio UNR9111J 35 UNR9112J/911EJ 60 UNR9113J/9114J/911AJ/ 80 911CJ/911MJ UNR911NJ/911TJ 80 400 UNR9110J/9115J/9116J/ 160 460 9117J/911BJ Collector-emitter saturation voltage VCE(sat) IC = −10 mA, IB = − 0.3 mA − 0.25 V UNR911VJ IC = −10 mA, I B = −1.5 mA Output voltage high-level VOH VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ−4.9 V Output voltage low-level VOL VCC = −5 V, VB = −2.5 V, RL = 1 kΩ− 0.2 V UNR9113J/911BJ VCC = −5 V, V B = −3.5 V, R L = 1 kΩ UNR911DJ VCC = −5 V, VB = −10 V, RL = 1 kΩ UNR911EJ VCC = −5 V, VB = −6 V, RL = 1 kΩ UNR911AJ VCC = −5 V, V B = −5 V, R L = 1 kΩ Transition frequency fT VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz UNR9113J VCB = −10 V, IE = 1 mA, f = 200 MHz 150 UNR911AJ VCB = −10 V, I E = 2 mA, f = 200 MHz 80 UNR911CJ VCB = −10 V, IE = 2 mA, f = 200 MHz 150 Input UNR9118J R1 −30% 0.51 +30% k Ω resistance UNR9119J 1.0 UNR911HJ/911MJ/911VJ 2.2 UNR9116J/911FJ/911LJ/911NJ 4.7 UNR9111J/9114J/9115J 10 UNR9112J/9117J/911TJ 22 UNR9110J/9113J/911DJ/911EJ 47 UNR911AJ/911BJ 100 |
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