Transistors with built-in Resistor

1

Publication date: December 2003

SJH00008CED

Silicon PNP epitaxial planar type

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts.

• Mini type package allowing easy automatic insertion through tape

packing and magazine packing

■ Resistance by Part Number

• UNR2121 (UN2121)

7A

2.2 k

Ω

2.2 k

Ω

• UNR2122 (UN2122)

7B

4.7 k

Ω

4.7 k

Ω

• UNR2123 (UN2123)

7C

10 k

Ω

10 k

Ω

• UNR2124 (UN2124)

7D

2.2 k

Ω

10 k

Ω

• UNR212X (UN212X)

7I

0.27 k

Ω

5 k

Ω

• UNR212Y (UN212Y)

7Y

3.1 k

Ω

4.6 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

B

C

E

Internal Connection

Unit: mm

1: Base

2: Emitter

3: Collector

EIAJ: SC-59

Mini3-G1 Package

0.40

+0.10

–0.05

2

1

3

(0.95) (0.95)

2.90

+0.20

–0.05

0.16

+0.10

–0.06

10˚

Note) The part numbers in the parenthesis show conventional part number.

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector current

−500

mA

Total power dissipation

200

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= −10 µA, I

E

= 0

−50

V

Collector-emitter voltage (Base open)

−50

V

Collector-base cutoff current (Emitter open)

−1.0

µA

UNR212X

− 0.1

Collector-emitter cutoff current (Base open)

−1.0

µA

UNR212X

− 0.5

Emitter-base

UNR2121

= −6 V, I

C

= 0

−5mA

cutoff current UNR2122/212X/212Y

−2

(Collector open) UNR2123/2124

−1

Forward current

UNR2121

= −10 V, I

C

= −5 mA

40



transfer ratio

UNR2122/212Y

50

UNR2123/2124

60

UNR212X

20

■ Electrical Characteristics T

a

= 25°C ± 3°C