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MMIS70R900PTH Datasheet(PDF) 4 Page - MagnaChip Semiconductor. |
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MMIS70R900PTH Datasheet(HTML) 4 Page - MagnaChip Semiconductor. |
4 / 10 page MMIS70R900P Datasheet Mar. 2016 Revision 1.3 MagnaChip Semiconductor Ltd. 4 Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current ISD - - 5.0 A Diode Forward Voltage VSD - - 1.4 V ISD = 5 A, VGS = 0 V Reverse Recovery Time trr - 315 - ns ISD = 5 A di/dt = 100 A/μs VDD = 100 V Reverse Recovery Charge Qrr - 2.0 - μC Reverse Recovery Current Irrm - 12.5 - A Reverse Diode Characteristics (T c=25℃ unless otherwise specified) |
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