SI9934BDY-T1-E3 datasheet(2/5 Pages) VISHAY

Part #	SI9934BDY-T1-E3

Description	Dual P-Channel 2.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si9934BDY

Vishay Siliconix

www.vishay.com

2

Document Number: 72525

S-41578—Rev. C, 23-Aug-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.6

−1.4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −12 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −12 V, VGS = 0 V, TJ = 55_C

−5

mA

On-State Drain Currenta

ID(on)

VDS = −5 V, VGS = −4.5 V

−20

A

Drain Source On State Resistancea

rDS( )

VGS = −4.5 V, ID = −6.4 A

0.028

0.035

W

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −1.8 A

0.044

0.056

W

Forward Transconductancea

gfs

VDS = −10 V, ID = −6.4 A

17

S

Diode Forward Voltagea

VSD

IS = −1.7 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

13

20

Gate-Source Charge

Qgs

VDS = 6 V, VGS = −4.5 V, ID = −6.4 A

2.6

nC

Gate-Drain Charge

Qgd

4.0

Gate Resistance

Rg

9

W

Turn-On Delay Time

td(on)

19

30

Rise Time

tr

VDD = 6 V, RL = 6 W

35

55

Turn-Off Delay Time

td(off)

VDD = 6 V, RL = 6 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

80

120

ns

Fall Time

tf

50

75

Source-Drain Reverse Recovery Time

trr

IF = −1.7 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

4

8

12

16

20

0

1234

5

VGS = 5 thru 3 V

TC = 125_C

−55_C

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

2 V

1.5 V

2.5 V

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