Philips Semiconductors

PSMN008-75P; PSMN008-75B

N-channel enhancement mode field-effect transistor

Product specification

Rev. 01 — 18 September 2000

4 of 14

9397 750 07495

© Philips Electronics N.V. 2000. All rights reserved.

7.

Thermal characteristics

7.1 Transient thermal impedance

Table 4:

Thermal characteristics

Symbol

Parameter

Conditions

Value

Unit

thermal resistance from junction to mounting

base

Figure 5

0.65

K/W

thermal resistance from junction to ambient

SOT78 package; vertical in still air

60

K/W

SOT404 package; mounted on

printed circuit board; minimum

footprint.

50

K/W

Fig 5.

Transient thermal impedance from junction to mounting base as a function of

pulse duration.

03ac94

10-3

10-2

10-1

1

10-5

10-4

10-3

10-2

10-1

1

t

p

(s)

Z

th(j-mb)

(K/W)

tp

tp

T

P

t

T

d =

single pulse

δ = 0.5

0.2

0.1

0.05

0.02