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PE25GB40 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers

Part # PE25GB40
Description  THYRISTOR MODULE
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PE25GB40 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers

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IT(AV) 25A, IT(RMS) 39A, ITSM 500A
di/dt 100 A/
μs
dv/dt 500V/
μs
(Applications)
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK(PD,PE,KK)25GB
THYRISTOR MODULE
UL;E76102
(M)
93.5MAX
80
110TAB
16.5
23
3
~+
21
23
3-M5
2- 6.5
■Maximum Ratings
Symbol
Item
PK25GB40 PD25GB40
KK25GB40 PE25GB40
Ratings
PK25GB80
PD25GB80
KK25GB80
PE25GB80
Unit
VRRM
*Repetitive Peak Reverse Voltage
400
800
V
480
960
V
400
800
V
VRSM
VDRM
*Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Symbol
Item
Conditions
Ratings
25
Unit
IT(AV)
*Average On-State Current
IT(RMS)
*R.M.S. On-State Current
Single phase, half wave, 180
°conduction, Tc:97℃
Single phase, half wave, 180
°conduction, Tc:97℃
ITSM
*Surge On-State Current
I2t
*I2t
PGM
Peak Gate Power Dissipation
PG(AV)
Average Gate Power Dissipation
IFGM
Peak Gate Current
VFGM
Peak Gate Voltage (Forward)
1
2cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
A
39
A
450/500
A
1000
10
A2S
W
1
VRGM
Peak Gate Voltage (Rsverse)
di
/dt
Critical Rate of Rise of On-State Current
IG
=100mA,Tj=25℃,VD12VDRM,dIG/dt=0.1A/μs
VISO
*Isolation Breakdown Voltage (R.M.S.)
Tj
*Operating Junction Temperature
Tstg
*Storage Temperature
Mounting
Torque
Mass
Mounting
(M5)
Terminal
(M5)
A.C.1minute
Recommended Value 2.5-3.9
(25-40)
Recommended Value 1.5-2.5
(15-25)
3
W
A
10
V
5
V
100
A/
μs
2500
V
−40 to +125
−40 to +125
4.7
(48)
2.7
(28)
170
N
・m
(㎏f・B)
g
Unit
A
Symbol
Item
Conditions
Ratings
4
Unit
IDRM
Repetitive Peak Off-State Current, max.
IRRM
*Repetitive Peak Reverse Current, max.
at VDRM, single phase, half wave, Tj
=125℃
at VDRM, single phase, half wave, Tj
=125℃
VTM
*Peak On-State Voltage, max.
IGT
/VGT
Gate Trigger Current/Voltage, max.
VGD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv
/dt
Critical Rate of Rise of Off-State Voltage, min.
IH
Holding Current, typ.
On-State Current 75A, Tj
=125℃ Inst. measurement
Tj
=25℃,IT=1A,VD=6V
mA
4
mA
1.50
V
50/3
Tj
=125℃,VD12VDRM
IT
=25A,IG=100mA,Tj=25℃,VD12VDRM,dIG/dt=0.1A/μs
0.25
mA/V
V
10
Tj
=125℃, VD23VDRM, Exponential wave.
Tj
=25℃
IL
Lutching Current, typ.
Rth
(j-c)*Thermal Impedance, max.
Tj
=25℃
Junction to case
500
μs
V/
μs
50
mA
100
mA
0.80
℃/W
■Electrical Characteristics
*mark:Thyristor and Diode part. No mark:Thyristor part
Power Thyristor/Diode Module PK25GB series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 800V are available. and electrically isolated mounting base make
your mechanical design easy.
K1
(A2)
(K2)
A1K2
G1
K2
G2
1
2
3
PK
K1
(A2)
(K2)
A1K2
K2
G2
1
2
3
PE
K1
(A2)
(K2)
A1K2
G1
K2
1
2
3
PD
K1
(A2)
(A1)
G1
K2
G2
1
2
1
KK


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