NCV8440STT3G datasheet(3/9 Pages) ONSEMI

Part #	NCV8440STT3G

Description	Protected Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NCV8440, NCV8440A

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MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 3)

(VGS = 0 V, ID = 1.0 mA, TJ = 25°C)

(VGS = 0 V, ID = 1.0 mA, TJ = −40°C to 125°C) (Note 4)

Temperature Coefficient (Negative)

V(BR)DSS

52

50.8

55

54

−9.3

59

59.5

V

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 40 V, VGS = 0 V)

(VDS = 40 V, VGS = 0 V, TJ = 125°C) (Note 4)

IDSS

10

25

mA

Gate−Body Leakage Current

(VGS = ±8 V, VDS = 0 V)

(VGS = ±14 V, VDS = 0 V)

IGSS

±35

±10

mA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (Note 3)

(VDS = VGS, ID = 100 mA)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.1

1.5

−4.1

1.9

V

mV/

°C

Static Drain−to−Source On−Resistance (Note 3)

(VGS = 3.5 V, ID = 0.6 A)

(VGS = 4.0 V, ID = 1.5 A)

(VGS = 10 V, ID = 2.6 A)

RDS(on)

150

135

95

180

160

110

mW

Forward Transconductance (Note 3) (VDS = 15 V, ID = 2.6 A)

gFS

3.8

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

VDS = 35 V, VGS = 0 V,

f = 10 kHz

Ciss

155

pF

Output Capacitance

Coss

60

Transfer Capacitance

Crss

25

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 10 kHz

Ciss

170

pF

Output Capacitance

Coss

70

Transfer Capacitance

Crss

30

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width

≤ 300 ms, Duty Cycle ≤ 2%.

4. Not subject to production testing.

5. Switching characteristics are independent of operating junction temperatures.

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