NCV8440A datasheet(5/9 Pages) ONSEMI

Part #	NCV8440A

Description	Protected Power MOSFET

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NCV8440, NCV8440A

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5

TYPICAL PERFORMANCE CURVES

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

TJ = 25°C

TJ = −40°C

2.4 V

3.4 V

3.6 V

3.8 V

VDS ≥ 10 V

VGS = 10 V

TJ = 150°C

2.6 V

2.8 V

3 V

3.2 V

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

−40

°C

25

°C

150

°C

−40

°C, VGS = 5 V

−40

°C, VGS = 10 V

25

°C, VGS = 5 V

25

°C, VGS = 10 V

150

°C, VGS = 5 V

50

100

150

200

250

300

350

34

56

789

10

50

100

150

200

250

300

135

7

9

150

°C, VGS = 10 V

ID = 2 A

0

2

4

6

8

10

0123

45

4 V

5 V

0

2

4

6

8

10

1

1.5

2

2.5

3

4

3.5

246

8

10

Figure 1. Single Pulse Maximum Switch−off

Current vs. Load Inductance

L, LOAD INDUCTANCE (mH)

100

10

1

0.1

1

10

150

°C

100

°C

25

°C

Figure 2. Single Pulse Maximum Switching

Energy vs. Load Inductance

L, LOAD INDUCTANCE (mH)

100

10

1

0.1

10

100

150

°C

100

°C

25

°C

Figure 3. On−State Output Characteristics

Figure 4. Transfer Characteristics

Figure 5. RDS(on) vs. Gate−Source Voltage

Figure 6. RDS(on) vs. Drain Current

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