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© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet

Rev. 01 — 8 November 2004

7 of 13

Philips Semiconductors

PHP/PHB33NQ20T

N-channel TrenchMOS™ standard level FET

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Gate-source voltage as a function of gate charge; typical values.

03aa32

0

1

2

3

4

5

-60

0

60

120

180

°C)

(V)

max

min

typ

03aa35

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

0246

(A)

max

typ

min

03ao16

0

2

4

6

8

10

0

1020

3040

(V)

°C

100 V

160 V