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MMP60R580P Datasheet(PDF) 2 Page - MagnaChip Semiconductor. |
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MMP60R580P Datasheet(HTML) 2 Page - MagnaChip Semiconductor. |
2 / 10 page MMP60R580P Datasheet Jun. 2013 Revision1.0 MagnaChip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 600 V Gate – Source voltage VGSS ±30 V Continuous drain current ID 8 A TC=25℃ 5 A TC=100℃ Pulsed drain current (1) IDM 24 A Power dissipation PD 70 W Single - pulse avalanche energy EAS 170 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 1.8 ℃/W Thermal resistance, junction-ambient max Rthja 62.5 ℃/W Thermal Characteristics Absolute Maximum Rating (T c=25℃ unless otherwise specified) |
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