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OPA623AU Datasheet(PDF) 4 Page - Burr-Brown (TI) |
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OPA623AU Datasheet(HTML) 4 Page - Burr-Brown (TI) |
4 / 15 page 4 ® OPA623 INPUT PROTECTION The need for protection from static damage has long been recognized for MOSFET devices, but all semiconductor devices deserve protection form this potentially damaging source. The OPA623 incorporates on-chip ESD protection diodes as shown in Figure 1. These diodes eliminate the need for external protection diodes, which can add capaci- tance and degrade AC performance. As shown, all input pins of the OPA623 are internally protected from ESD by a pair of back-to-back reverse-biased diodes to either power supply. These diodes begin to con- duct when the input voltage exceeds either power supply by about 0.7V. This situation can occur when the amplifier loses its power supplies while a signal source is still present. The diodes can typically withstand a continuous current of 30mA without destruction. To ensure long-term reliability, however, the diode current should be limited externally to approximately 10mA whenever possible. FIGURE 1. Internal ESD Protection. +V CC –V CC ESD Protection diodes internally connected to all pins. Internal Circuitry External Pin The internal protection diodes are designed to withstand 2.5kV (using the Human Body Model) and will provide adequate ESD protection for most normal handling proce- dures. However, static damage can cause subtle changes in the amplifier input characteristics without necessarily de- stroying the device. In precision amplifiers, such changes may degrade offset and drift noticeably. For this reason, static protection is strongly recommended when handling the OPA623. |
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