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ESDA6V1-5T6 Datasheet(PDF) 2 Page - STMicroelectronics |
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ESDA6V1-5T6 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 11 page Characteristics ESDA6V1-5T6 2/11 Doc ID 16855 Rev 2 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 2. Electrical characteristics (values, Tamb = 25 °C) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP ESD IEC 61000-4-2, air discharge ESD IEC 61000-4-2, contact discharge 15 8 kV PPP Peak pulse power dissipation (8/20 µs)(1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 35 W Ipp Repetitive peak pulse current typical value (8/20 µs) 3 A Tj Junction temperature 125 °C Tstg Storage temperature range -55 + 150 °C TL Maximum lead temperature for soldering during 10 s 260 °C Symbol Test conditions Min. Typ. Max. Unit VBR IR = 1 mA 6.1 7.2 V IRM VRM = 3 V 200 nA CVR = 3 V DC, Fosc = 1 MHz, Vosc = 30 mV rms 34 70 pF Symbol Parameter V = Breakdown voltage I = Leakage current @ V V = Stand-off voltage BR RM RM RM V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd |
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