MME60R290P datasheet(3/10 Pages) MGCHIP

Part #	MME60R290P

Description	600V 0.29(ohm) N-channel MOSFET

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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MME60R290P Datasheet

Mar. 2016 Revision 1.1

MagnaChip Semiconductor Ltd.

3

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain

– Source

Breakdown voltage

V(BR)DSS

600

-

V

VGS = 0V,

ID=0.25mA

Gate Threshold Voltage

VGS(th)

2

3

4

V

VDS = VGS, ID=0.25mA

Zero Gate Voltage

Drain Current

IDSS

-

1

μA

VDS = 600V,

VGS = 0V

Gate Leakage Current

IGSS

-

100

nA

VGS = ±30V,

VDS =0V

Drain-Source On

State Resistance

RDS(ON)

-

0.26

0.29

Ω

VGS = 10V, ID = 6.0 A

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Input Capacitance

Ciss

-

1001

-

pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

-

750

-

Reverse Transfer Capacitance

Crss

-

45

-

Effective Output Capacitance

Energy Related

(3)

Co(er)

-

29

-

VDS = 0V to 480V,

VGS = 0V,f = 1.0MHz

Turn On Delay Time

td(on)

-

20

-

ns

VGS = 10V, RG = 25Ω,

VDS = 300V, ID = 13 A

Rise Time

tr

-

45

-

Turn Off Delay Time

td(off)

-

90

-

Fall Time

tf

-

33

-

Total Gate Charge

Qg

-

32

-

nC

VGS = 10V, VDS = 480V,

ID = 13 A

Gate

– Source Charge

Qgs

-

8

-

Gate

– Drain Charge

Qgd

-

11.5

-

Gate Resistance

RG

-

3.4

-

Ω

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

 Static Characteristics (T

c=25℃ unless otherwise specified)

 Dynamic Characteristics (T

c=25℃ unless otherwise specified)

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