MDV3604 datasheet(2/6 Pages) MGCHIP

Part #	MDV3604

Description	Single P-Channel Trench MOSFET, -30V, -20A, 12.1m(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Jan. 2015. Version 1.3

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

Quantity

RoHS Status

MDV3604URH

-55~150

oC

PowerDFN33

Tape & Reel

5000 units

Halogen Free

Electrical Characteristics (Ta = 25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = -250μA, VGS = 0V

-30

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250μA

-1.0

-1.8

-3.0

Drain Cut-Off Current

IDSS

VDS = -30V, VGS = 0V

-

-1

μA

Gate Leakage Current

IGSS

VGS = ±25V, VDS = 0V

-

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = -20V, ID = -12A

-

8.6

10

mΩ

VGS = -10V, ID = -12A

-

10

12.1

VGS = -5V, ID = -10A

14.6

18.3

Forward Transconductance

gFS

VDS = -5V, ID = -10A

25.5

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = -15V, ID = -12A

VGS = -10V

-

30.5

-

nC

Gate-Source Charge

Qgs

-

5.2

-

Gate-Drain Charge

Qgd

-

7.0

-

Input Capacitance

Ciss

VDS = -15V, VGS = 0V,

f = 1.0MHz

-

1433

-

pF

Reverse Transfer Capacitance

Crss

-

212

-

Output Capacitance

Coss

-

338

-

Turn-On Delay Time

td(on)

VGS = -10V ,VDS = -15V,

RL = 1.25Ω, RGEN = 3Ω

-

15.2

-

ns

Turn-On Rise Time

tr

-

12.9

-

Turn-Off Delay Time

td(off)

-

50.6

-

Turn-Off Fall Time

tf

-

34.6

-

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = -1A, VGS = 0V

-

-0.71

-1.0

V

Body Diode Reverse Recovery Time

trr

IF = -12A, di/dt = 100A/μs

-

38.5

ns

Body Diode Reverse Recovery Charge

Qrr

-

35.9

-

nC

Note :

1.

Surface mounted FR-4 board by JEDEC (jesd51-7)

2.

Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.

3.

T < 10sec

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