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70P248L55BYGI Datasheet(PDF) 9 Page - Integrated Device Technology |
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70P248L55BYGI Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 23 page  6.42 IDT70P258/248L Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM Industrial Temperature Range 9 tRC R/ W CE ADDR tAA OE UB, LB 5675 drw 05 (4) tACE (4) tAOE (4) tABE (4) (1) tLZ tOH (2) tHZ (3,4) tBDD DATAOUT BUSYOUT VALID DATA (4) , Waveform of Read Cycles(5) NOTES: 1. Timing depends on which signal is asserted last, OE, CE, LB, or UB. 2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB. 3. tBDD delay is required only in cases where opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation to valid output data. 4. Start of valid data depends on which timing becomes effective last tABE, tAOE, tACE, tAA or tBDD. 5. SEM = VIH. |
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