MDU5693 datasheet(5/9 Pages) MGCHIP

Part #	MDU5693

Description	Dual Asymmetric N-channel Trench MOSFET 30V

Download	9 Pages

Scroll/Zoom	100%

Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

Logo

5 / 9 page

Jan. 2015 Ver. 1.0

MagnaChip Semiconductor Ltd.

5

FET2 Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 10mA, VGS = 0V

30

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

1.1

1.4

2.2

Drain Cut-Off Current

IDSS

VDS = 30V, VGS = 0V

-

1

μA

Gate Leakage Current

IGSS

VGS = ±12V, VDS = 0V

-

±0.1

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 20A

-

1.8

2.5

mΩ

TJ=125

oC

-

2.3

3.2

VGS = 4.5V, ID = 20A

-

2.4

3.2

Forward Transconductance

gfs

VDS = 5V, ID = 20A

-

85

-

S

Dynamic Characteristics

Total Gate Charge

Qg(10V)

VDS = 15.0V, ID = 20A,

VGS = 10V

32.8

46.8

65

nC

Total Gate Charge

Qg(4.5V)

14.2

20.6

28.8

Gate-Source Charge

Qgs

-

6.8

-

Gate-Drain Charge

Qgd

-

3.9

-

Input Capacitance

Ciss

VDS = 15.0V, VGS = 0V,

f = 1.0MHz

2189

3150

4093

pF

Output Capacitance

Coss

690

1010

1300

Reverse Transfer Capacitance

Crss

48

71

92

Turn-On Delay Time

td(on)

VGS = 10V VDD=15V,

ID=20A, Rg=3Ω

-

11.3

-

ns

Rise Time

tr

-

12

-

Turn-Off Delay Time

td(off)

-

57.4

-

Fall Time

tf

-

7.08

-

Gate Resistance

Rg

f=1 MHz

0.5

1.0

2.0

Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = 1.0A, VGS = 0V

-

0.6

1.0

V

Body Diode Reverse Recovery Time

trr

IF = 20A, dl/dt = 200A/μs

-

38

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

64.4

-

nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.

2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V..

Similar Part No. - MDU5693

Manufacturer	Part #	Datasheet	Description
MagnaChip Semiconductor...	MDU5692S	1Mb / 9P	Dual Asymmetric N-channel Trench MOSFET 30V
MagnaChip Semiconductor...	MDU5692SVRH	1Mb / 9P	Dual Asymmetric N-channel Trench MOSFET 30V

More results

Similar Description - MDU5693

Manufacturer	Part #	Datasheet	Description
MagnaChip Semiconductor...	MDU5593S	1Mb / 9P	Dual Asymmetric N-channel Trench MOSFET 30V
	MDU5512	2Mb / 9P	Dual Asymmetric N-channel Trench MOSFET 30V
	MDU5692S	1Mb / 9P	Dual Asymmetric N-channel Trench MOSFET 30V
Alpha & Omega Semicondu...	AON6920	400Kb / 10P	30V Dual Asymmetric N-Channel MOSFET
	AON6906A	376Kb / 10P	30V Dual Asymmetric N-Channel MOSFET
	AON6910A	429Kb / 11P	30V Dual Asymmetric N-Channel MOSFET
	AON6908A	437Kb / 11P	30V Dual Asymmetric N-Channel MOSFET
	AOE6922	483Kb / 10P	30V Dual Asymmetric N-Channel MOSFET
	AON7902	420Kb / 11P	30V Dual Asymmetric N-Channel MOSFET

More results

MDU5693 Datasheet(PDF) 5 Page - MagnaChip Semiconductor.

MDU5693 Datasheet(HTML) 5 Page - MagnaChip Semiconductor.

Similar Part No. - MDU5693

Similar Description - MDU5693

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL