MKP1V160 datasheet(2/6 Pages) ONSEMI

Part #	MKP1V160

Description	Sidac High Voltage

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Manufacturer	ONSEMI [ON Semiconductor]

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MKP1V120 Series

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THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction−to−Lead

Lead Length = 3/8

″

RqJL

40

°C/W

Lead Solder Temperature

(Lead Length

w 1/16″ from Case, 10 s Max)

TL

260

°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Repetitive Peak Off−State Current

TJ = 25°C

(50 to 60 Hz Sine Wave)

VDRM = 90 V, MKP1V120, MKP1V130 and MKP1V160

VDRM = 180 V, MKP1V240

IDRM

−

5.0

mA

ON CHARACTERISTICS

Breakover Voltage

IBO = 35 mA

MKP1V120

35

mA

MKP1V130

200

mA

MKP1V160

35

mA

MKP1V240

VBO

110

120

150

220

−

130

140

170

250

Volts

Peak On−State Voltage

(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)

VTM

−

1.3

1.5

Volts

Dynamic Holding Current

(Sine Wave, 50 to 60 Hz, RL = 100 Ohm)

IH

−

100

mA

Switching Resistance

(Sine Wave, 50 to 60 Hz)

RS

0.1

−

k

W

DYNAMIC CHARACTERISTICS

Critical Rate−of−Rise of On−State Current,

Critical Damped Waveform Circuit

(IPK = 130 Amps, Pulse Width = 10 msec)

di/dt

−

120

−

A/

ms

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