CM1263-02SE_11 datasheet(3/4 Pages) ONSEMI

Part #	CM1263-02SE

Description	Low Capacitance ESD Protection for High-Speed Serial Interfaces

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CM1263−02SE

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3

Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VP

Operating Supply Voltage (VP − VN)

3.3

5.5

V

IP

Operating Supply Current

(VP − VN) = 3.3 V

8.0

mA

VF

Diode Forward Voltage

Top Diode

Bottom Diode

IF = 8 mA; TA = 25°C

0.60

0.80

0.95

V

ILEAK

Channel Leakage Current

TA = 25°C; VP = 5 V, VN = 0 V,

VTEST = 0 to 5 V

0.1

1.0

mA

CIN

Channel Input Capacitance

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

0.85

1.2

pF

ΔCIN

Channel Input Capacitance Matching

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

0.02

pF

VESD

ESD Protection

Peak Discharge Voltage at any

channel input, in system:

a) Contact Discharge per

IEC 61000−4−2 standard

b) Air Discharge per

IEC 61000−4−2 standard

TA = 25°C; (Notes 2 and 3)

TA = 25°C; (Note 3)

±8

±15

kV

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

TA = 25°C, IPP = 1 A, tP = 8/20 mS

(Note 3)

+9.96

–1.6

V

RDYN

Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1 A, tP = 8/20 mS

Any I/O pin to Ground;

(Note 3)

0.96

0.5

W

1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.

3. These measurements performed with no external capacitor on VP (VP floating).

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