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CM1230-08CP Datasheet(PDF) 3 Page - ON Semiconductor

Part # CM1230-08CP
Description  Low-Capacitance ESD Protection Array
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CM1230-08CP Datasheet(HTML) 3 Page - ON Semiconductor

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CM1230
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3
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Supply Voltage (VP − VN)
6.0
V
Operating Temperature Range
–40 to +85
°C
Storage Temperature Range
–65 to +150
°C
DC Voltage at any Channel Input
(VN − 0.5) to (VP + 0.5)
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
–40 to +85
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VP
Operating Supply Voltage (VP−VN)
3.3
5.5
V
IP
Operating Supply Current
(VP−VN) = 3.3 V
8.0
mA
VF
Diode Forward Voltage
Top Diode
Bottom Diode
IF = 8 mA; TA = 25°C
0.60
0.60
0.80
0.80
0.95
0.95
V
ILEAK
Channel Leakage Current
TA = 25°C; VP = 5 V, VN = 0 V, VIN = 0 V to 5 V
±0.1
±1.0
mA
CIN
Channel Input Capacitance
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
0.80
1.2
pF
DCIN
Channel Input Capacitance Matching
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
0.02
pF
CMUTUAL Mutual Capacitance between signal pin
and adjacent signal pin
At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V
0.15
pF
VESD
In−system ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000−4−2 standard
b) Human Body Model,
MIL−STD−883, Method 3015
TA = 25°C (Notes 4 and 5)
TA = 25°C (Notes 3 and 5)
±8
±15
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25°C, IPP = 1A, tP = 8/20 mS
(Note 5)
+9.8
–1.8
V
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1 A, tP = 8/20 mS
Any I/O pin to Ground (Note 5)
0.76
0.56
W
2. All parameters specified at TA = –40°C to +85°C unless otherwise noted.
3. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VP = 3.3 V, VN grounded.
4. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.
5. These measurements performed with no external capacitor on VP.
6. Measured under pulsed conditions, pulse width = 0.7 ms, maximum current = 1.5 A.


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