CM1216-08MR datasheet(3/7 Pages) ONSEMI

Part #	CM1216-08MR

Description	6 and 8-Channel Low Capacitance ESD Arrays

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Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

VP

Operating Supply Voltage

(VP−VN)

3.3

5.5

V

IP

Operating Supply Current

(VP−VN) = 3.3 V

8

mA

VF

Diode Forward Voltage

Top Diode

Bottom Diode

IF = 20 mA; TA = 25°C

0.6

0.8

0.95

V

ILEAK

Channel Leakage Current

TA = 25°C; VP = 5 V, VN = 0 V

±0.1

±1.0

mA

CIN

Channel Input Capacitance

At 1 MHz, VP = 3.3 V, VN = 0 V, VIN = 1.65 V

(Note 2)

1.6

2.0

pF

DCIN

Channel Input Capacitance Matching

0.04

pF

CMUTUAL

Mutual Capacitance

(VP−VN) = 3.3 V

0.13

pF

VESD

ESD Protection

Peak Discharge Voltage at any

channel input, in system,

contact discharge per

IEC 61000−4−2 standard

TA = 25°C

(Notes 2 and 3)

±15

kV

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

IPP = 1 A, tP = 8/20 mS; TA = 25°C

+9.0

−1.5

V

RDYN

Dynamic Resistance

Positive transients

Negative transients

IPP = 1 A, tP = 8/20 mS; TA = 25°C

0.6

0.4

W

1. All parameters specified at TA = −40°C to +85°C unless otherwise noted.

2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.

3. From I/O pins to VP or VN only. VP bypassed to VN with low ESR 0.2 mF ceramic capacitor.

PERFORMANCE CHARACTERISTICS

Figure 1. Typical Variation of CIN vs. VIN

(f = 1 MHz, VP= 3.3 V, VN = 0 V, 0.1 mF Chip Capacitor between VP and VN, TA = 255C)

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