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CM1213A Datasheet(PDF) 2 Page - ON Semiconductor

Part # CM1213A
Description  4-Channel Low Capacitance ESD Protection Array
Download  6 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CM1213A Datasheet(HTML) 2 Page - ON Semiconductor

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CM1213A−04SO, SZCM1213A−04SO
http://onsemi.com
2
Table 1. PIN DESCRIPTIONS
Pin
Name
Type
Description
1
CH1
I/O
ESD Channel
2
VN
GND
Negative Voltage Supply Rail
3
CH2
I/O
ESD Channel
4
CH3
I/O
ESD Channel
5
VP
PWR
Positive Voltage Supply Rail
6
CH4
I/O
ESD Channel
PACKAGE/PINOUT DIAGRAMS
Top View
CH2
VP
6−Lead SC−74
VN
CH3
CH1
CH4
1
2
34
5
6
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Operating Supply Voltage (VP − VN)
6.0
V
Operating Temperature Range
–40 to +85
°C
Storage Temperature Range
–65 to +150
°C
DC Voltage at any channel input
(VN − 0.5) to (VP + 0.5)
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Rating
Units
Operating Temperature Range
–40 to +85
°C
Package Power Rating
225
mW
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VP
Operating Supply Voltage (VP−VN)
3.3
5.5
V
IP
Operating Supply Current
(VP−VN) = 3.3 V
8.0
mA
VF
Diode Forward Voltage
IF = 8 mA; TA = 25°C
0.90
V
ILEAK
Channel Leakage Current
TA = 25°C; VP = 5 V, VN = 0 V
±0.1
±1.0
mA
CIN
Channel Input Capacitance
At 1 MHz, VIN = 0 V (Note 2)
2.0
pF
DCIO
Channel I/O ti I/O Capacitance
1.5
pF
VESD
ESD Protection
Peak Discharge
Voltage at any channel input, in system
Contact discharge per
IEC 61000−4−2 standard
TA = 25°C (Notes 2 and 3)
±8
kV
VCL
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25°C, IPP = 1A, tP = 8/20 mS
(Note 2)
+9.9
–1.6
V
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
TA = 25°C, IPP = 1A, tP = 8/20 mS
(Note 2)
0.96
0.5
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.
2. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VP = 3.3 V, VN grounded.
3. These measurements performed with no external capacitor on VP (VP floating).


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