Schottky Barrier Diodes (SBD)

1

Publication date: August 2001

SKH00063AED

Silicon epitaxial planar type

For switching

I Features

• High-density mounting is possible

• Low forward voltage V

• Optimum for high frequency rectification because of its short

• SS-Mini type 3-pin package

I Absolute Maximum Ratings T

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

= 30 V

30

µA

Forward voltage (DC)

0.3

V

= 30 mA

1

Terminal capacitance

= 1 V, f = 1 MHz

1.5

pF

1

ns

= 1 mA, R

L

= 100 Ω

Detection efficiency

η

65

%

= 3.9 kΩ, C

L

= 10 pF

I Electrical Characteristics T

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

30

V

Peak reverse voltage

30

V

Peak forward current

Series

150

mA

 

110

Forward current (DC)

Series

30

mA

 

20

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Note) *: Value per chip

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

Wave Form Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

I

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A

Marking Symbol

• MA3S795D: M3D • MA3S795E: M3D

Internal Connection

12

3

12

3

E

EIAJ : SC-89

SSMini3-F2 Package

MA3S795D MA3S795E

1 Cathode 1 Anode 1

2 Cathode 2 Anode 2

3 Anode1, 2 Cathode 1, 2

Unit: mm

3

12

(0.80)

1.60

+0.05

–0.03

0.12

+0.05

–0.02

0.60

+0.05

–0.03

(0.80)

(0.51)

(0.51)

3

°

D

Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

 

2. Rated input/output frequency: 2 GHz

Note) The part number in the parenthesis shows conventional part number.